Reaction Bonded Silicon Carbide Tile

Tsanangudzo Pfupi:

Reaction bonded silicon carbide inozivikanwawo sesiliconized silicon carbide kana SiSiC, inogadzirwa nekupinza makompakiti akagadzirwa nemusanganiswa weSiC uye kabhoni nesilicon yemvura.Iyo silicon inobata pamwe nekabhoni inogadzira yakawanda SiC iyo inosunga yekutanga SiC zvimedu, Chero yakawandisa silicon inozadza asara ma pores mumuviri uye inogadzira yakaomesesa SiC-Si inoumbwa, Kupinda kunopa izvo zvinhu musanganiswa wakasarudzika wemakanika, zvinopisa, uye magetsi. properties.

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Product Detail

Zvakanakira Reaction Bonded Silicon Carbide

1) Low density.
2) Corrosion resistance.
3) Pfeka kuramba.
4) Oxidation kuramba.
5) Abrasion kuramba.
6) Yakanaka kupisa kutyisa kupikisa (nekuda kwekuderera kwekuwedzera kwemafuta ekuwedzera uye yakakwirira yekupisa conductivity).
7) Yakanakisa Simba pakupisa kwakanyanya.
8) Yakanaka dimensional kudzora kwezvimiro zvakaoma.

Pfeka Zvigadzirwa Zvinodzivirira: Silicon carbide ndiro, Silicon carbide zvidhinha, Pipe lining, Pipe Cone, dutu, nezvimwewo.
Kiln fenicha: Plate, Beam, Roller, Burner Nozzle, Round danda, square danda, gomba danda.Crucible, Sagger, nezvimwewo.
Zvimwe: Desulfurization nozzles
Kushandiswa kweReaction Bonded Silicon Carbide:
Reaction bonded silicon carbide yakaratidza kuve yakanakisa sarudzo yekupfeka senge pombi liner, Nozzles, kuyerera kwekudzora kuvhuvhuta uye makuru mapfekero ekupfeka mumigodhi pamwe nemamwe maindasitiri.

Main Parameter

Properties	Units	SiSiC/RBSIC
Kuwanda kwehuwandu (SiC)	V01%	≥85
Bulk density	g/cm³	3.01
Inooneka porosity	%	＜0.1
Modulus yekuputika pa20 ℃	Mpa	250
Modulus yekuputika pa1200 ℃	Mpa	280
Modulus ye elasticity pa20 ℃	Gpa	330
Kutsemuka kuomarara	Mpa*m1/2	3.3
Thermal Conductivity pa1200 ℃	wm^-1.k^-1	45
Thermal kuwedzera pa1200 ℃	a×10^-6/℃	4.5
Thermal shock resistance pa1200 ℃		Kugona chose
Coefficient of heat radiation		<0.9
Max.kushanda tembiricha	℃	1350

Size

inogona kugadzirwa maererano nezvinodiwa nevatengi.

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